Keynote Speakers

Out-of-SOA Electrothermal Limitations of Power Semiconductor Devices: Characterization and Modeling

Prof. Andrea Irace | University of Naples Federico II

Andrea Irace (Senior Member, IEEE) received the master’s degree in electronic engineering and the Ph.D. degree in electronics and computer science from the University of Naples Federico II, Naples, Italy, in 1994. In 1998, he was a Visiting Scientist at the Delft Institute of Microelectronics and Submicron Technology, Delft, The Netherlands. He is currently a Full Professor of Electronics with the University of Naples Federico II. He has authored more than 200 articles published in peer-reviewed international journals and conferences. His research interests focus on the design of electronic devices for renewable energy sources and electric mobility, the development of sensors for biomedical applications, and the Internet of Things (IoT). Prof. Irace is a member of the Technical Program Committee of ICSCRM and ESREF and he has acted as General Chairperson for the 2023 edition of the International Conference on Silicon Carbide and Related Materials.

Abstract

Nowadays Wide Bandgap semiconductor devices are getting an increased attention due to some attractive features and superior electrical properties. As the use of these devices is reaching the market, many concerns about their robustness and long term reliability are arising.

In this talk we will focus on the behavior of Silicon carbide power Mosfets during out-of-SOA events such as short circuit or unclamped inductive switching conditions. In the first part of the talk, a detailed approach to self consistent electrothermal simulations of power devices will be given, while in the final part of the talk some results of infrared characterization of short circuit events in power devices will be reported.

Andrea Irace (Senior Member, IEEE)

Prof. Andrea Irace
University of Naples Federico II